AO3162 600v,0.034a n-channel mosfet general description product summary 700v@150 i d (at v gs =10v) 0.034a r ds(on) (at v gs =10v) < 500 w symbol v ds the AO3162 is fabricated using an advanced high vol tage mosfet process that is designed to deliver high lev els of performance and robustness in popular ac-dc applications. by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. v ds v units parameter absolute maximum ratings t a =25c unless otherwise noted maximum drain-source voltage 600 sot23a top view bottom view d g s g s d g ds ds v gs i dm peak diode recovery dv/dt dv/dt t j , t stg symbol t 10s steady-state steady-state r q jl junction and storage temperature range -50 to 150 c power dissipation a t a =70c 1.39 0.89 v 30 gate-source voltage t a =70c a i d t a =25c 0.034 0.028 0.16 pulsed drain current b continuous drain current a,f v/ns 5 p d t a =25c maximum junction-to-ambient a r q ja maximum junction-to-ambient a 90 w max thermal characteristics units c/w 70 parameter typ maximum junction-to-lead c c/w c/w 63 125 80 100 sot23a top view bottom view d g s g s d g ds rev0: may 2012 www.aosmd.com page 1 of 5
AO3162 symbol min typ max units 600 - - - 700 - bv dss / ? tj - 0.69 - v/ o c - - 1 - - 10 i gss gate-body leakage current - - 100 n a v gs(th) gate threshold voltage 2.8 3.2 4.1 v r ds(on) - 154 500 w g fs - 0.045 - s v sd - 0.74 1 v i s maximum body-diode continuous current - - 0.034 a i sm - - 0.16 a c iss - 4.2 6 pf c oss - 0.45 0.6 pf c rss - 0.05 0.07 pf r g 14 28 42 w q g - 0.1 0.15 nc q gs - 0.03 0.05 nc q gd - 0.05 0.08 nc t d(on) - 13.8 20 ns t r - 10 15 ns t d(off) - 39.2 57 ns t f - 13 19 ns maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime i dss zero gate voltage drain current v ds =600v, v gs =0v gate drain charge v ds =5v, i d =8 m a v ds =480v, t j =125c i s =0.016a,v gs =0v v ds =40v, i d =0.016a forward transconductance dynamic parameters diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =400v, i d =0.01a gate source charge m a v zero gate voltage drain current id=250 a, vgs=0v v ds =0v, v gs =30v drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions bv dss static drain-source on-resistance v gs =10v, i d =0.016a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters turn-on rise time turn-off delaytime v gs =10v, v ds =300v, i d =0.01a, r g =6 w turn-off fall time t f - 13 19 ns t rr - 105 160 ns q rr - 9.5 14.3 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =0.016a,di/dt=100a/ m s,v ds =300v body diode reverse recovery time i f =0.016a,di/dt=100a/ m s,v ds =300v turn-off fall time a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's specif ic board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev0: may 2012 www.aosmd.com page 2 of 5
AO3162 typical electrical and thermal characteristics 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 i d (a) v ds (volts) fig 1: on-region characteristics v gs =4v 4.5v 10v 5v 0 0.005 0.01 0.015 0.02 0.025 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics v ds =40v 25 c 0 50 100 150 200 250 300 0 0.01 0.02 0.03 0.04 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 -75 -25 25 75 125 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.016a 40 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 10 i d (a) v ds (volts) fig 1: on-region characteristics v gs =4v 4.5v 10v 5v 0 0.005 0.01 0.015 0.02 0.025 0 1 2 3 4 5 6 i d (a) v gs (volts) figure 2: transfer characteristics v ds =40v 25 c 0 50 100 150 200 250 300 0 0.01 0.02 0.03 0.04 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 -75 -25 25 75 125 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.016a 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature rev0: may 2012 www.aosmd.com page 3 of 5
AO3162 typical electrical and thermal characteristics 0 2 4 6 8 10 0.00 0.03 0.06 0.09 0.12 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =0.01a 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0001 0.001 0.01 0.1 1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 1s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s 0 20 40 60 80 100 120 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t j(max) =150 c t a =25 c 0 2 4 6 8 10 0.00 0.03 0.06 0.09 0.12 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =400v i d =0.01a 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0001 0.001 0.01 0.1 1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note e) 1s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s 0 20 40 60 80 100 120 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) t j(max) =150 c t a =25 c 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note e) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =125 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: may 2012 www.aosmd.com page 4 of 5
AO3162 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id - + vdc l vgs vds id bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar rev0: may 2012 www.aosmd.com page 5 of 5
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